DEFORMATION OF SILICON AT LOW-TEMPERATURES

被引：79

作者：

HILL, MJ ^{[1
]}

ROWCLIFFE, DJ ^{[1
]}

机构：

[1] BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1007/BF00540753

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1569 / 1576

页数：8

共 21 条

[1]

Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2]

Ashby M.F., 1971, STRENGTHENING METHOD, P137

[3]

BUCK TM, 1970, NBS337 SPEC PUBL, P419

[4]

CARROLL KG, 1968, T METALL SOC AIME, V242, P338

[5] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J].

CHAUDHURI, AR ;

PATEL, JR ;

RUBIN, LG .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2736-&

[6]

Cottrell A. H., 1953, DISLOCATIONS PLASTIC, P53

[7] ELECTRON-MICROSCOPE INVESTIGATION OF MICROPLASTIC DEFORMATION MECHANISMS OF SILICON BY INDENTATION [J].

EREMENKO, VG ;

NIKITENK.VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01) :317-330

[8] ESCAPE OF DISLOCATIONS FROM BOUND STATES BY TUNNELING [J].

GILMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) :6086-&

[9]

GILMAN JJ, 1968, MECHANICAL BEHAVIOR, P152

[10] SHOCK-WAVE COMPRESSION OF GERMANIUM FROM 20 TO 140 KBAR [J].

GRAHAM, RA ;

JONES, OE ;

HOLLAND, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3955-&

← 1 2 3 →