EFFECTS OF WELL NUMBER IN 1.3-MU-M GAINASP/INP GRIN-SCH STRAINED-LAYER QUANTUM-WELL LASERS

被引：26
|
作者：
NAMEGAYA, T
MATSUMOTO, N
YAMANAKA, N
IWAI, N
NAKAYAMA, H
KASUKAWA, A
机构：
[1] Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Nishi-ku
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期
关键词：
D O I：
10.1109/3.283806
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effects of well number in 1.3-mum GaInAsP/InP GRIN-SCH compressively strained-layer quantum-well lasers were investigated from the viewpoint of the crystal quality of the strained-layer quantum wells and low threshold current operation at high temperature. As a result, we find that the optimum well number that gives the minimum threshold current increases with operating temperature and it was limited to the degradation of crystal quality of the quantum wells due to the critical thickness. A very high CW operating temperature of 170-degrees-C was obtained. A very high output power of over 300 mW was also achieved.
引用
收藏
页码：578 / 584
页数：7
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