STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2)

被引：99

作者：

KAWAHARA, T ^{[1
]}

YAMAMUKA, M ^{[1
]}

MAKITA, T ^{[1
]}

NAKA, J ^{[1
]}

YUUKI, A ^{[1
]}

MIKAMI, N ^{[1
]}

ONO, K ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CORP,MAT & ELECTR DEVICES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

LSI; CVD; LIQUID SOURCE; CAPACITOR; BST; DIELECTRIC CONSTANT; LEAKAGE CURRENT DENSITY; FILM COMPOSITION; STEP COVERAGE;

D O I：

10.1143/JJAP.33.5129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of (Ba, Sr)TiO3 (BST) with high dielectric constant were prepared on Pt/SiO2/Si substrates of 6-inch-diameter by liquid source chemical vapor deposition using Ba(DPM)(2), Sr(DPM)(2) and TiO(DPM)(2) (DPM = dipivaloylmethanato; C11H19O2) dissolved in tetrahydrofuran (THF). The reproducibility of +/-3% for the film composition was achieved by optimizing the deposition procedures. It was found that the coverage of 72%, obtained at the substrate temperature T-s = 753 K, was better than those obtained using other Ti sources such as Ti(O-i-Pr)(4) (TTIP) and Ti(O-i-Pr)(2)(DPM)(2). The electrical properties of the 480-Angstrom-thick BST film, deposited at T-s = 753 K using TiO(DPM)(2), were as follows: dielectric constant epsilon = 230, equivalent SiO2 thickness t(eq) = 7.8 Angstrom, leakage current density J(L) = 6.7 X 10(-6) A/cm(2) at 1.65 V and dielectric loss tan delta = 0.013.

引用

页码：5129 / 5134

页数：6

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