EFFECTS OF SURFACE OXYGEN VACANCIES ON ELECTRONIC STATES OF TIO2(110), TIO2(001) AND SRTIO3(001) SURFACES

被引：39

作者：

AIURA, Y

NISHIHARA, Y

HARUYAMA, Y

KOMEDA, T

KODAIRA, S

SAKISAKA, Y

MARUYAMA, T

KATO, H

机构：

[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN

[2] TEXAS INSTRUMENTS INC,TSUKUBA R&D CTR,TSUKUBA,IBARAKI 305,JAPAN

[3] HIROSAKI UNIV,FAC SCI,DEPT PHYS,HIROSAKI,AOMORI 036,JAPAN

[4] KYOTO UNIV,FAC SCI,DEPT CHEM,KYOTO 606,JAPAN

[5] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICA B | 1994年 / 194卷 / pt 1期

关键词：

Angle resolved photoemission spectroscopy - Electronic state - Fermi level - Full width half maximum - Low energy electron diffraction - Metal insulator transition - Surface oxygen vacancy - Ultra high vacuum;

D O I：

10.1016/0921-4526(94)90937-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied effects of surface oxygen vacancies on electronic states of TiO2(110), TiO2(001) and SrTiO3(001) surfaces by means of angle-resolved photoemission spectroscopy. The surface oxygen vacancy induces a state at approximately 1eV below the Fermi level in the bulk band gap. In the angle-resolved photoemission spectra, this state has slight energy dispersion and doesn't cross the Fermi level when the emission angle is changed. These results indicate that the state induced by surface oxygen vacancies is not simply interpreted by delocalized model, and that the localized behavior also plays an important role for the metal-insulator transition of these materials.

引用

页码：1215 / 1216

页数：2

共 4 条

[1] EFFECT OF OXYGEN VACANCIES ON ELECTRONIC STATES OF CAVO3-DELTA AND SRVO3-DELTA - A PHOTOEMISSION-STUDY [J].