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PHOTOLUMINESCENCE INTENSITY AND SURFACE RECOMBINATION VELOCITY AT N-TYPE INP AQUEOUS-SOLUTION INTERFACE
被引:0
作者
:
YAMAMOTO, A
论文数:
0
引用数:
0
h-index:
0
YAMAMOTO, A
OHKUBO, M
论文数:
0
引用数:
0
h-index:
0
OHKUBO, M
ASADA, Y
论文数:
0
引用数:
0
h-index:
0
ASADA, Y
HASHIMOTO, A
论文数:
0
引用数:
0
h-index:
0
HASHIMOTO, A
机构
:
来源
:
DENKI KAGAKU
|
1993年
/ 61卷
/ 07期
关键词
:
INDIUM PHOSPHIDE;
PHOTOLUMINESCENCE;
SURFACE RECOMBINATION VELOCITY;
D O I
:
10.5796/electrochemistry.61.885
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:885 / 886
页数:2
相关论文
共 4 条
[1]
STUDY OF SURFACE RECOMBINATION IN GAAS AND INP BY PICOSECOND OPTICAL TECHNIQUES
HOFFMAN, CA
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BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
HOFFMAN, CA
GERRITSEN, HJ
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BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
GERRITSEN, HJ
NURMIKKO, AV
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机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
NURMIKKO, AV
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(03)
: 1603
-
1604
[2]
PHOTOLUMINESCENCE AND X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF INP SURFACE TREATED BY ACID AND BASE SOLUTIONS
KRAWCZYK, SK
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0
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0
KRAWCZYK, SK
HOLLINGER, G
论文数:
0
引用数:
0
h-index:
0
HOLLINGER, G
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(08)
: 870
-
872
[3]
A MODEL TO EXPLAIN THE EFFECTIVE PASSIVATION OF THE GAAS SURFACE BY (NH4)2SX TREATMENT
NANNICHI, Y
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0
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UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
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UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
FAN, JF
OIGAWA, H
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0
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0
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0
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UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
OIGAWA, H
KOMA, A
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UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
KOMA, A
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1988,
27
(12):
: L2367
-
L2369
[4]
DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION
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BHAT, R
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[J].
APPLIED PHYSICS LETTERS,
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(01)
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←
1
→
共 4 条
[1]
STUDY OF SURFACE RECOMBINATION IN GAAS AND INP BY PICOSECOND OPTICAL TECHNIQUES
HOFFMAN, CA
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
HOFFMAN, CA
GERRITSEN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
GERRITSEN, HJ
NURMIKKO, AV
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
NURMIKKO, AV
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(03)
: 1603
-
1604
[2]
PHOTOLUMINESCENCE AND X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF INP SURFACE TREATED BY ACID AND BASE SOLUTIONS
KRAWCZYK, SK
论文数:
0
引用数:
0
h-index:
0
KRAWCZYK, SK
HOLLINGER, G
论文数:
0
引用数:
0
h-index:
0
HOLLINGER, G
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(08)
: 870
-
872
[3]
A MODEL TO EXPLAIN THE EFFECTIVE PASSIVATION OF THE GAAS SURFACE BY (NH4)2SX TREATMENT
NANNICHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
NANNICHI, Y
FAN, JF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
FAN, JF
OIGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
OIGAWA, H
KOMA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
UNIV TOKYO, FAC CHEM, BUNKYO, TOKYO 103, JAPAN
KOMA, A
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1988,
27
(12):
: L2367
-
L2369
[4]
DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION
SANDROFF, CJ
论文数:
0
引用数:
0
h-index:
0
SANDROFF, CJ
NOTTENBURG, RN
论文数:
0
引用数:
0
h-index:
0
NOTTENBURG, RN
BISCHOFF, JC
论文数:
0
引用数:
0
h-index:
0
BISCHOFF, JC
BHAT, R
论文数:
0
引用数:
0
h-index:
0
BHAT, R
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(01)
: 33
-
35
←
1
→