SELF-LIMITING GROWTH OF ZINC CHALCOGENIDES AND THEIR SUPERLATTICES

ZnSe, ZnTe and ZnSe ZnTe stained-layer superlattices (SLSs) were grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). In the ALE growth of ZnTe, a self-limiting mechanism was observed, in which the deposition rate saturated at 0.5 monolayers per cycle. ZnSe films were grown by MBE-ALE with N2 gas as dopant, and remarkable effects of ALE on the doping efficiency of nitrogen were observed. Furthermore, a new type of short-period SLS which consists of (ZnSe)m-[(ZnTe)p-(ZnSe)q]n was grown by MBE-ALE. The (ZnSe)6-[(ZnTe)1-(ZnSe)2]2 SLS showed very strong photoluminescence at an emission energy of 2.39 eV at 4.2 K.