SELF-LIMITING GROWTH OF ZINC CHALCOGENIDES AND THEIR SUPERLATTICES

被引：7
|
作者：
KONAGAI, M
TAKEMURA, Y
YAMASAKI, K
TAKAHASHI, K
机构：
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152
来源：
THIN SOLID FILMS | 1993年 / 225卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(93)90165-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnSe, ZnTe and ZnSe ZnTe stained-layer superlattices (SLSs) were grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). In the ALE growth of ZnTe, a self-limiting mechanism was observed, in which the deposition rate saturated at 0.5 monolayers per cycle. ZnSe films were grown by MBE-ALE with N2 gas as dopant, and remarkable effects of ALE on the doping efficiency of nitrogen were observed. Furthermore, a new type of short-period SLS which consists of (ZnSe)m-[(ZnTe)p-(ZnSe)q]n was grown by MBE-ALE. The (ZnSe)6-[(ZnTe)1-(ZnSe)2]2 SLS showed very strong photoluminescence at an emission energy of 2.39 eV at 4.2 K.
引用
收藏
页码：256 / 260
页数：5
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