MOS-TRANSISTOR MODELING USING NEURAL NETWORK

被引：50

作者：

LITOVSKI, VB

RADJENOVIC, JI

MRCARICA, ZM

MILENKOVIC, SL

机构：

[1] University of Niš, 18000 Niš

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 18期

关键词：

NEURAL NETWORKS; METAL-OXIDE-SEMICONDUCTOR STRUCTURES AND DEVICES; TRANSISTORS;

D O I：

10.1049/el:19921124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new application of the artificial neural network (ANN) is proposed. It is used for black-box modelling of electronic devices. The power of ANNs used as a realisation of a mapping algorithm is demonstrated on the MOS transistor modelling paradigm. A unique continuous function is used to cover all regions of transistor operation.

引用

页码：1766 / 1768

页数：3