ELECTRICAL CHARACTERISTICS OF PARAELECTRIC LEAD LANTHANUM ZIRCONIUM TITANATE THIN-FILMS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS

被引：48
作者：
JONES, RE
MANIAR, PD
OLOWOLAFE, JO
CAMPBELL, AC
MOGAB, CJ
机构：
[1] Advanced Products Research and Development Laboratory, Motorola, Inc., Austin
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期
关键词：
D O I：
10.1063/1.106486
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Paraelectric lead lanthanum zirconium titanate (PLZT) films, 150 nm thick, were deposited using a spin-coat, sol-gel process followed by a 650-degrees-C oxygen anneal. X-ray diffraction indicated complete conversion to the perovskite phase. Sputter-deposited platinum electrodes were employed with the PLZT films to form thin-film capacitors with the best combination of high charge storage density (26.1-mu-C/cm2 at 3 V and 36.4-mu-C/cm2 at 5 V) and leakage current density (0.2-mu-A/cm2 at 3 V and 0.5-mu-A/cm2 at 5 V) reported to date. The electrical characteristics of these thin-film capacitors meet the requirements for a planar bit cell capacitor for 64-Mbit dynamic random access memories.
引用
收藏
页码：1022 / 1024
页数：3
相关论文
共 13 条
[1]  
Budd K. D., 1985, British Ceramic Proceedings, P107
[2]  
Carrano J., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P255, DOI 10.1109/IEDM.1989.74273
[3]   LEAKAGE-CURRENT REDUCTION IN THIN TA2O5 FILMS FOR HIGH-DENSITY VLSI MEMORIES [J].
HASHIMOTO, C ;
OIKAWA, H ;
HONMA, N .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) :14-18
[4]   EFFECT OF OZONE ANNEALING ON THE DIELECTRIC-PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].
ISOBE, C ;
SAITOH, M .
APPLIED PHYSICS LETTERS, 1990, 56 (10) :907-909
[5]   HIGH CHARGE STORAGE IN AMORPHOUS BATIO3 THIN-FILMS [J].
LI, P ;
LU, TM ;
BAKHRU, H .
APPLIED PHYSICS LETTERS, 1991, 58 (23) :2639-2641
[6]   A FERROELECTRIC DRAM CELL FOR HIGH-DENSITY NVRAMS [J].
MOAZZAMI, R ;
HU, CM ;
SHEPHERD, WH .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) :454-456
[7]  
Numasawa Y., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P43, DOI 10.1109/IEDM.1989.74224
[8]   FERROELECTRIC MATERIALS FOR 64 MB AND 256 MB DRAMS [J].
PARKER, LH ;
TASCH, AF .
IEEE CIRCUITS AND DEVICES MAGAZINE, 1990, 6 (01) :17-26
[9]   BARRIER LAYERS FOR REALIZATION OF HIGH CAPACITANCE DENSITY IN SRTIO3 THIN-FILM CAPACITOR ON SILICON [J].
SAKUMA, T ;
YAMAMICHI, S ;
MATSUBARA, S ;
YAMAGUCHI, H ;
MIYASAKA, Y .
APPLIED PHYSICS LETTERS, 1990, 57 (23) :2431-2433
[10]  
Shen B.W., 1987, IEDM, P582
12