DEPLETION-ELECTRIC-FIELD-INDUCED CHANGES IN 2ND-HARMONIC GENERATION FROM GAAS

被引：71
|
作者：
QI, J [1 ]
YEGANEH, MS [1 ]
KOLTOVER, I [1 ]
YODH, AG [1 ]
THEIS, WM [1 ]
机构：
[1] USN,RES DEPT,DIV PHYS,CHINA LAKE,CA 93555
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 04期
关键词：
D O I：
10.1103/PhysRevLett.71.633
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Experiments reveal that the near surface second-order nonlinear optical susceptibility, chi(2)(2omega,omega,omega), is significantly affected by band-bending induced-electric fields in the depletion region of GaAs(001). Both n- and p-type GaAs samples exhibit a reduction of the bulk second-order susceptibility chi(yxz)(2) independent of electric field direction. A three band theoretical model was used to qualitatively explain these observations.
引用
收藏
页码：633 / 636
页数：4
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