DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE

被引：86

作者：

WATANABE, MO

MORIZUKA, K

MASHITA, M

ASHIZAWA, Y

ZOHTA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期

关键词：

D O I：

10.1143/JJAP.23.L103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L103 / L105

页数：3

共 14 条

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