STRUCTURAL INVESTIGATION BY X-RAY-DIFFRACTION OF GAAS EPILAYERS AND AIAS/GAAS SUPERLATTICES GROWN ON (100) SI BY MBE

被引：26
|
作者：
TAPFER, L
MARTINEZ, JR
PLOOG, K
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1989年 / 4卷 / 08期
关键词：
D O I：
10.1088/0268-1242/4/8/003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：617 / 621
页数：5
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