RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON

被引：80

作者：

CARTER, C

MASZARA, W

SADANA, DK

ROZGONYI, GA

LIU, J

WORTMAN, J

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27650

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：459 / 461

页数：3

共 18 条

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[9] ELECTRON-MICROSCOPE STUDIES OF ION-IMPLANTED SILICON AND GALLIUM-ARSENIDE AFTER LASER AND FURNACE ANNEALING [J].

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