ELECTRON-IRRADIATION INDUCED CORROSION OF SILICON

被引：9
|
作者：
FLOWER, HM [1 ]
SWANN, PR [1 ]
机构：
[1] UNIV LONDON,IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2BP,ENGLAND
来源：
CORROSION SCIENCE | 1977年 / 17卷 / 04期
关键词：
D O I：
10.1016/0010-938X(77)90055-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：305 / 315
页数：11
相关论文
共 50 条
  • [41] RADIATION DEFECTS IN SODIUM-DOPED SILICON FORMED BY ELECTRON-IRRADIATION
    ZASTAVNYI, AV
    KOROL, VM
    USTINOVA, EI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (09): : 1081 - 1082
  • [42] SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON INDUCED BY ELECTRON-IRRADIATION AT ROOM-TEMPERATURE
    LULLI, G
    MERLI, PG
    ANTISARI, MV
    PHYSICAL REVIEW B, 1987, 36 (15): : 8038 - 8042
  • [43] INFLUENCE OF THE PARAMETERS OF PULSED ELECTRON-IRRADIATION ON THE EFFICIENCY OF FORMATION OF DEFECTS IN SILICON
    ABDUSATTAROV, AG
    EMTSEV, VV
    MASHOVETS, TV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (12): : 1375 - 1376
  • [44] ELECTRON-IRRADIATION EFFECTS ON THE SHUNT RESISTANCE OF SILICON SOLAR-CELLS
    BANERJEE, S
    ANDERSON, WA
    SOLAR CELLS, 1987, 20 (04): : 315 - 321
  • [45] EFFECT OF ELECTRON-IRRADIATION ON THE IN-X ACCEPTOR IN IN-DOPED SILICON
    SWAMINATHAN, V
    LANG, JE
    HEMENGER, PM
    SMITH, SR
    APPLIED PHYSICS LETTERS, 1979, 35 (02) : 184 - 187
  • [46] REDISTRIBUTION OF GOLD ATOMS IN EPITAXIAL SILICON LAYERS DURING THE ELECTRON-IRRADIATION
    BOLOTOV, VV
    EMEKSUZYAN, VM
    SHORIN, AM
    SCHMALZ, K
    BABANSKAYA, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 125 (01): : K1 - K5
  • [47] CHANGES IN AC CONDUCTIVITY OF SILICON WITH ELECTRON-IRRADIATION AT 0.5K
    GWOZDZ, PS
    KOEHLER, JS
    PHYSICAL REVIEW B, 1972, 6 (12): : 4571 - 4574
  • [48] Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide
    V. V. Kozlovski
    A. E. Vasil’ev
    A. A. Lebedev
    K. S. Davydovskaya
    M. E. Levinshtein
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2023, 17 : 397 - 400
  • [49] ONE MEV ELECTRON-IRRADIATION OF NEW TECHNOLOGY SILICON SOLAR CELLS
    CURTIN, DJ
    MEULENBERG, A
    ENERGY CONVERSION, 1972, 12 (03): : 81 - +
  • [50] EFFECT OF QUENCHING AND ELECTRON-IRRADIATION ON THE PROPERTIES OF N-TYPE SILICON
    BEREZINA, GM
    KORSHUNOV, FP
    INORGANIC MATERIALS, 1983, 19 (09) : 1255 - 1258
12345