ELECTRON-BEAM FABRICATION OF HIGH-DENSITY CMOS RAM CELLS

被引：0

作者：

WILLIAMSON, RA ^{[1
]}

BREWER, TL ^{[1
]}

ROBBINS, RA ^{[1
]}

VARNELL, GL ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C190 / C190

页数：1

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