共 50 条
- [3] HIGH MOBILITY IN1-XGAXASYP1-Y INVERSION-MODE MISFETS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 347 - 352
- [6] AL2O3 FILM GROWN BY CVD AND THE INTERFACE CHARACTERISTICS OF AL2O3-INP AND AL2O3-SI CHINESE PHYSICS, 1985, 5 (02): : 522 - 526
- [10] The mechanism of mobility degradation in MISFETs with Al2O3 gate dielectric 2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, : 188 - 189