NEUTRON-INDUCED TYPE CHANGES IN P-TYPE SILICON

被引：3

作者：

URLI, NB

PERSIN, M

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(67)90296-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1627 / &

共 7 条

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[2]

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[3]

GIBSON AF, 1957, PROGRESS SEMICOND ED, V2

[4] LATTICE ABSORPTION BANDS IN SILICON [J].

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PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470) :265-272

SONDER, E ;

TEMPLETON, LC .

[6] GAMMA IRRADIATION OF SILICON .3. LEVELS IN P-TYPE MATERIAL [J].

SONDER, E ;

TEMPLETO.LC .

[7]

VAVILOV VS, 1964, P S RADIATION DAMAGE, P115