LEC GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS WITH UNIFORM CARRIER CONCENTRATION DISTRIBUTION

被引:28
作者
OHMORI, Y [1 ]
SUGII, K [1 ]
AKAI, S [1 ]
MATSUMOTO, K [1 ]
机构
[1] SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
关键词
D O I
10.1016/0022-0248(82)90174-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:79 / 85
页数:7
相关论文
共 11 条
[1]  
CHIN AK, 1981, APPL PHYS LETT, V40, P248
[2]   INAS-GASB SUPERLATTICES-SYNTHESIZED SEMICONDUCTORS AND SEMIMETALS [J].
ESAKI, L .
JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :227-240
[3]   GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].
HILDEBRAND, O ;
KUEBART, W ;
BENZ, KW ;
PILKUHN, MH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288
[4]   LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE [J].
KONDO, S ;
MIYAZAWA, S .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) :39-44
[5]   FACETS IN GASB CRYSTALS PULLED UNDER CONCAVE INTERFACE CONDITIONS [J].
KUMAGAWA, M ;
ASABA, Y ;
YAMADA, S .
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (02) :245-253
[6]   A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB [J].
MIYAZAWA, S ;
KONDO, S ;
NAGANUMA, M .
JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :670-674
[7]   TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF ALGAASSB-GASB DH LASERS [J].
MOTOSUGI, G ;
KAGAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2303-2304
[8]  
NAGANUMA M, 1981, P INT S GAAS RELATED, P125
[9]   COHERENT GUNN OSCILLATIONS IN GAXIN1-XSB [J].
SEGAWA, K ;
MIKI, H ;
OTSUBO, M ;
SHIRAHATA, K ;
FUJIBAYASHI, K .
ELECTRONICS LETTERS, 1976, 12 (05) :124-125
[10]   OBSERVATION OF GROWTH STRIATIONS IN UNDOPED GASB SINGLE-CRYSTALS [J].
TOHNO, S ;
KATSUI, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1614-1616