ROLE OF DIFFUSION CURRENT IN ELECTROLUMINESCENCE OF GAAS DIODES ( ELECTRON IRRADIATION EFFECTS 78 DEGREES-300 DEGREES K E/T )

被引:26
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MILLEA, MF
AUKERMAN, LW
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10.1063/1.1754101
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O59 [应用物理学];
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页码:168 / +
页数:1
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共 10 条
[1]   ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J].
ARCHER, RJ ;
LEITE, RC ;
YARIV, A ;
PORTO, SPS ;
WHELAN, JM .
PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&
[2]   P-N JUNCTION LASERS [J].
BURNS, G ;
NATHAN, MI .
PROCEEDINGS OF THE IEEE, 1964, 52 (07) :770-+
[3]   COHERENT LIGHT EMISSION FROM P-N JUNCTIONS [J].
HALL, RN .
SOLID-STATE ELECTRONICS, 1963, 6 (05) :405-&
[4]  
Hall RN, 1960, P I ELECT ENG B, V106B, P983
[5]   EFFECTS OF GAMMA-IRRADIATION UPON LIFETIME + LUMINESCENCE OF GAP DIODES ( 60CO IRRADIATION SOURCE 1.2 TIMES 107 DONORS CM MINUS3 PER ROENTGEN E ) [J].
LOGAN, RA ;
WHITE, HG ;
MIKULYAK, RM .
APPLIED PHYSICS LETTERS, 1964, 5 (03) :41-&
[6]   DEPENDENCE OF RECOMBINATION RADIATION ON CURRENT IN CAAS DIODES [J].
MAYBURG, S ;
BLACK, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1521-&
[7]   TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J].
PANKOVE, JI .
PHYSICAL REVIEW LETTERS, 1962, 9 (07) :283-&
[8]   CARRIER TRANSPORT ACROSS ELECTROLUMINESCENT P-N JUNCTIONS IN GAAS [J].
PANKOVE, JI .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1890-&
[9]   DEGRADATION OF LUMINESCENCE IN NEUTRON-IRRADIATED GAAS DIODES [J].
PETREE, MC .
APPLIED PHYSICS LETTERS, 1963, 3 (04) :67-67
[10]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243