GOLD AS A RECOMBINATION CENTRE IN SILICON

被引：111

作者：

FAIRFIELD, JM

GOKHALE, BV

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 08期

关键词：

D O I：

10.1016/0038-1101(65)90036-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：685 / +

页数：1

共 10 条

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[9]

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[10] MECHANISM OF GOLD DIFFUSION INTO SILICON [J].

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