RELIABILITY PROBLEMS IN LAYERWISE NEUTRON-ACTIVATION ANALYSIS

被引：0

作者：

PEREZHOGIN, GA

机构：

来源：

JOURNAL OF ANALYTICAL CHEMISTRY OF THE USSR | 1982年 / 37卷 / 08期

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中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：1099 / 1101

页数：3

共 11 条

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[5]

GAZORZEWSKI P, 1979, J RADIOANAL CHEM, V52, P93

[6] COMPARISON BETWEEN CONCENTRATION PROFILES OF ARSENIC IMPLANTED IN SILICON MEASURED BY MEANS OF NEUTRON-ACTIVATION ANALYSIS AND RADIOACTIVE ION-IMPLANTATION [J].

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[7]

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[8] STUDY OF DIFFUSION OF IMPURITIES IN SEMICONDUCTOR SILICON BY ACTIVATION-ANALYSIS AND NUCLEAR-REACTION METHODS [J].

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[9]

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[10]

PEREZHOGIN GA, 1978, ZH ANAL KHIM, V33, P449

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