THE INFLUENCE OF ISOVALENT ADMIXTURE ALLOYING ON PERFECTION OF THE STRUCTURE OF GALLIUM-ARSENIDE SINGLE-CRYSTALS

被引：0

|

作者：

BOLSHEVA, YN

GRIGORYEV, YA

GRISHINA, SP

MILVIDSKY, MG

OSVENSKY, VB

SHIFRIN, SS

机构：

来源：

KRISTALLOGRAFIYA | 1982年 / 27卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：722 / 728

页数：7

相关论文

共 50 条

[21] ORIENTED SCATTERING OF BETA PARTICLES IN SILICON AND GALLIUM-ARSENIDE SINGLE-CRYSTALS
BOBUDAEV, AY
VOROBEV, SA
KAPLIN, VV
SOKHOREV.VV
TIMOSHNI.YA
TSEKHANO.IA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1064 - 1064
[22] RECOMBINATIONAL DISLOCATION ACTIVITY IN SINGLE-CRYSTALS AND EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
MARKOV, AV
MALVIDSKY, MG
SHERSHAKOV, AN
KRISTALLOGRAFIYA, 1989, 34 (05): : 1319 - 1320
[23] INFLUENCE OF ISOVALENT IMPURITIES ON THE ELECTRICAL INHOMOGENEITY OF INDIUM ARSENIDE SINGLE-CRYSTALS
KARATAEV, VV
YUROVA, ES
MILVIDSKII, MG
FRIDSHTAND, ES
NEMTSOVA, GA
INORGANIC MATERIALS, 1985, 21 (10) : 1425 - 1429
[24] NATURE OF DEFECTS IN TIN-DOPED GALLIUM-ARSENIDE SINGLE-CRYSTALS
ANASTASYEVA, NA
BUBLIK, VT
OSVENSKY, VB
MILVIDSKY, MG
STOLYAROV, OG
KHOLODNYI, LP
KRISTALLOGRAFIYA, 1978, 23 (02): : 314 - 319
[25] EFFECT OF MELT COMPOSITION ON THE ELECTRICAL-PROPERTIES AND STRUCTURE OF UNDOPED GALLIUM-ARSENIDE SINGLE-CRYSTALS
KOVALCHUK, IA
MARKOV, AV
MILVIDSKII, MG
INORGANIC MATERIALS, 1988, 24 (02) : 253 - 255
[26] INFLUENCE OF ISOVALENT DOPING WITH BISMUTH ON THE CONCENTRATION OF SHALLOW ACCEPTORS IN GALLIUM-ARSENIDE
BIRYULIN, YF
GOLUBEV, LV
NOVIKOV, SV
CHALDYSHEV, VV
SHMARTSEV, YV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 579 - 580
[27] ELECTRON-MICROSCOPIC STUDY OF GALLIUM-ARSENIDE SINGLE-CRYSTALS DOPED WITH TELLURIUM
MORGULIS, LM
OSVENSKI.VB
MILVIDSK.MG
FIZIKA TVERDOGO TELA, 1974, 16 (01): : 223 - 225
[28] PROBLEM OF CAUSES OF MACROSCOPIC INHOMOGENEITY OF SINGLE-CRYSTALS OF UNDOPED SEMIINSULATING GALLIUM-ARSENIDE
MARKOV, AV
MOROZOV, AN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 94 - 96
[29] ACOUSTIC-EMISSION FROM GALLIUM-ARSENIDE SINGLE-CRYSTALS DURING DEFORMATION
OGURA, M
ADACHI, Y
IKOMA, T
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6745 - 6750
[30] EFFECT OF CONCENTRATION INHOMOGENEITY ON INTERNAL-STRESSES IN GALLIUM-ARSENIDE SINGLE-CRYSTALS
ZADOROZHNYI, NS
KOVALENKO, VF
MILVIDSKII, MG
PROKHOROVICH, AV
INORGANIC MATERIALS, 1991, 27 (06) : 947 - 950

← 1 2 3 4 5 →