BLUE-GREEN ZNSE LASER-DIODES FOR OPTOELECTRONICS - PRRESENT STATE AT WURZBURG-UNIVERSITY

A review is given on the research activities at Wurzburg University in the field of blue-green emitting ZnSe laser diodes. Of great importance for both the structural and electrical properties is the possibility to grow a GaAs buffer layer on the GaAs substrate prior to the II-VI growth. Pulsed room temperature lasing with a duty cycle up to 17% is obtained using quaternary ZnMgSSe cladding layers, ternary ZnSSe waveguides, and a single CdZnSe quantum well. Important issues for long-term stability of such laser diodes like growth start, p-type doping, and ohmic contacts are discussed.