STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON GAAS SUBSTRATES - OBSERVATION OF THE ZINCBLENDE POLYTYPE

被引：93
作者：
STRITE, S
CHANDRASEKHAR, D
SMITH, DJ
SARIEL, J
CHEN, H
TERAGUCHI, N
MORKOC, H
机构：
[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[4] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287
[5] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0022-0248(93)90605-V
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the first observation of the zincblende polytype of the InN semiconductor. InN films were grown on vicinal (100) GaAs substrates by plasma enhanced molecular beam epitaxy. Transmission electron microscopy showed the InN films to be highly defective with both zincblende and wurtzite domains being present. The zincblende domains were epitaxially oriented to the substrate. The wurtzite InN had its c axis normal to the [111] zincblende planes which suggests stacking faults as the nucleation mechanism of the hexagonal phase. X-ray diffractometry measured a lattice constant a = 0.498 +/- 0.001 nm for the zincblende InN polytype and a = 0.36 + 0.01 nm and c = 0.574 +/- 0.001 nm for the wurtzite polytype.
引用
收藏
页码：204 / 208
页数：5
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