TEMPERATURE-DEPENDENCE OF GOLD INDUCED CONDUCTIVITY INVERSION

被引：0

作者：

RADZIMSKI, ZJ ^{[1
]}

BUCZKOWSKI, A ^{[1
]}

ROZGONYI, GA ^{[1
]}

SEKIGUCHI, T ^{[1
]}

KUSANAGI, S ^{[1
]}

SUMINO, K ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Defect induced inversion of conductivity type was studied at the surface of heteroepitaxial Si(Ge) structures as a function of sample temperature. The inversion was achieved by controlled contamination with Au introduced by diffusion from a backside evaporated layer. A theoretical explanation is presented. The electrical activity of defects and the inversion effect were evaluated using the electron beam induced current technique in a scanning electron microscope

引用

页码：721 / 724

页数：4

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