TEMPERATURE-DEPENDENCE OF GOLD INDUCED CONDUCTIVITY INVERSION

被引：0
|
作者：
RADZIMSKI, ZJ [1 ]
BUCZKOWSKI, A [1 ]
ROZGONYI, GA [1 ]
SEKIGUCHI, T [1 ]
KUSANAGI, S [1 ]
SUMINO, K [1 ]
机构：
[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Defect induced inversion of conductivity type was studied at the surface of heteroepitaxial Si(Ge) structures as a function of sample temperature. The inversion was achieved by controlled contamination with Au introduced by diffusion from a backside evaporated layer. A theoretical explanation is presented. The electrical activity of defects and the inversion effect were evaluated using the electron beam induced current technique in a scanning electron microscope
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页码：721 / 724
页数：4
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