DEEP LEVELS IN MOLECULAR-BEAM EPITAXIAL INXAL1-XAS/INP

被引：0
|
作者：
HONG, WP [1 ]
DHAR, S [1 ]
BERGER, P [1 ]
CHIN, A [1 ]
BHATTACHARYA, PK [1 ]
机构：
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：302 / 303
页数：2
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