THE EFFECT OF METAL LAYERS ON THE BAND OFFSETS AT THE SILICON-GERMANIUM INTERFACE

In order to understand the process of band-offset modification by the introduction of interlayers at semiconductor heterojunctions, we performed self-consistent ab initio pseudopotential calculations on the Si/Ge interface with In and Sb interlayers. The results of the calculations show a substantial reduction in the valence band offset with the Sb interlayer compared with no interlayer but no change when In is introduced. We suggest a possible reason for these different results.