THE EFFECT OF METAL LAYERS ON THE BAND OFFSETS AT THE SILICON-GERMANIUM INTERFACE

被引：8

作者：

BASS, JM

MATTHAI, CC

机构：

[1] Dept. of Phys., Univ. Coll. of Wales, Cardiff

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 01期

关键词：

D O I：

10.1088/0268-1242/6/1/014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to understand the process of band-offset modification by the introduction of interlayers at semiconductor heterojunctions, we performed self-consistent ab initio pseudopotential calculations on the Si/Ge interface with In and Sb interlayers. The results of the calculations show a substantial reduction in the valence band offset with the Sb interlayer compared with no interlayer but no change when In is introduced. We suggest a possible reason for these different results.

引用

页码：69 / 70

页数：2

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