RAPID THERMAL NITRIDATION OF THIN THERMAL SILICON DIOXIDE FILMS

被引：24

作者：

NULMAN, J ^{[1
]}

KRUSIUS, JP ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：148 / 150

页数：3

共 11 条

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JOHNSON, NM ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :316-318

[2] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

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TAMMINGA, Y .

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[3] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J].

ITO, T ;

KATO, I ;

NOZAKI, T ;

NAKAMURA, T ;

ISHIKAWA, H .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :370-372

[4] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

[5] RETARDATION OF DESTRUCTIVE BREAKDOWN OF SIO2-FILMS ANNEALED IN AMMONIA GAS [J].

ITO, T ;

ARAKAWA, H ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2248-2251

[6]

Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[7] EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDE [J].

LAI, SK ;

DONG, DW ;

HARTSTEIN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2042-2044

[8]

Nulman J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P169

[9] RADIATION EFFECTS IN NITRIDED OXIDES [J].

TERRY, FL ;

AUCOIN, RJ ;

NAIMAN, ML .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :191-193

[10] A MULTIWAFER PLASMA SYSTEM FOR ANODIC NITRIDATION AND OXIDATION [J].

WONG, SS ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :175-177

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