MICROSCOPIC AND MACROSCOPIC UNIFORMITY CONTROL IN PLASMA-ETCHING

被引：45

作者：

GIAPIS, KP

SCHELLER, GR

GOTTSCHO, RA

HOBSON, WS

LEE, YH

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.103532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By cooling substrates to low temperatures (-40°C), plasma etching of AlGaAs/AlAs/GaAs structures is performed in an ion-activated, surface reaction limited regime. As a result, microscopic and macroscopic uniformity are vastly improved and etching is independent of gas flow patterns, plasma geometry, and reactor loading. Because the reactant is concentrated on the surface, etching rates remain large.

引用

收藏

页码：983 / 985

页数：3

相关论文

共 20 条

[1]

BATE RT, 1989, SOLID STATE TECHNOL, P101

[2] TRENCH ETCHES IN SILICON WITH CONTROLLABLE SIDEWALL ANGLES [J].

CARLILE, RN ;

LIANG, VC ;

PALUSINSKI, OA ;

SMADI, MM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) :2058-2064

[3] CONDUCTANCE CONSIDERATIONS IN THE REACTIVE ION ETCHING OF HIGH ASPECT RATIO FEATURES [J].

COBURN, JW ;

WINTERS, HF .

APPLIED PHYSICS LETTERS, 1989, 55 (26) :2730-2732

[4] THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J].

DANNER, DA ;

HESS, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :151-155

[5]

DANNER DA, 1989, J ELECTROCHEM SOC, V134, P669

[6] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].

FLAMM, DL ;

DONNELLY, VM ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30

[7]

HALON B, 1983, Patent No. 4375385

[8] VERTICAL CAVITY SINGLE QUANTUM WELL LASER [J].

JEWELL, JL ;

HUANG, KF ;

TAI, K ;

LEE, YH ;

FISCHER, RJ ;

MCCALL, SL ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1989, 55 (05) :424-426

[9] GAAS-ALAS MONOLITHIC MICRORESONATOR ARRAYS [J].

JEWELL, JL ;

SCHERER, A ;

MCCALL, SL ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :94-96

[10] LASING CHARACTERISTICS OF GAAS MICRORESONATORS [J].

JEWELL, JL ;

MCCALL, SL ;

LEE, YH ;

SCHERER, A ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1989, 54 (15) :1400-1402