MODEL FOR BORON-DIFFUSION IN SI AT HIGH-CONCENTRATIONS

被引：2

作者：

HOLLAND, OW ^{[1
]}

NARAYAN, J ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 40-1卷

关键词：

D O I：

10.1016/0168-583X(89)91040-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：537 / 542

页数：6

共 19 条

[1]

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[2]

BLAMIRES NG, 1971, ION IMPLANTATION SEM, P119

[3]

Fair R. B., 1981, Impurity doping processes in silicon, P315

[4]

Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658

[5] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[6] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].

FRANK, FC ;

TURNBULL, D .

PHYSICAL REVIEW, 1956, 104 (03) :617-618

[7]

HOFKER WK, 1975, PHILIPS RES REPTS S, V8

[8]

HOLLAND OW, IN PRESS APPL PHYS L

[9]

HOLLAND OW, 1987, ADV PROCESSING SEMIC, V797, P14

[10] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J].

JACOBONI, C ;

CANALI, C ;

OTTAVIANI, G ;

QUARANTA, AA .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :77-89

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