DEPENDENCE OF THE GROWTH-RATE OF INAS EPITAXIAL LAYERS ON ASCL3 PRESSURE IN THE INAS-ASCL3-H2 SYSTEM

被引：0

|

作者：

ALEKSANDROVA, GA

IVONIN, IV

KRASILNIKOVA, LM

LAVRENTYEVA, LG

PASHCHENKO, PB

SHUBIN, AE

机构：

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1983年 / 26卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：49 / 52

页数：4

相关论文

共 50 条

[41] INSITU OBSERVATION OF CRUST FORMATION OF GAAS IN THE GA-ASCL3-H2 SYSTEM
KOUKITU, A
SEKI, H
JOURNAL OF CRYSTAL GROWTH, 1984, 67 (03) : 549 - 555
[42] SI-DOPED GAAS BY SICL4-ASCL3 LIQUID SOLUTION IN ASCL3-GAAS-GA-H2 CHEMICAL VAPOR-DEPOSITION SYSTEM
FENG, M
EU, V
ZIELINSKI, T
KIM, HB
WHELAN, JM
APPLIED PHYSICS LETTERS, 1981, 38 (09) : 688 - 690
[43] Production of GaAs transistors with the Schottky barrier in Bi-GaAs-AsCl3-HCl-SnCl2-H-2-He system by epitaxial deposition
Voronin, V. O.
Guba, S. K.
Kurylo, I. V.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2006, 9 (04) : 49 - 51
[44] 供MESFET用的AsCl3/Ga/H2双鼓泡瓶GaAsCVD系统的特性
H.M.Cox
李中南
半导体情报, 1979, (06) : 54 - 62
[45] NOTE ON COMPOSITION OF GAAS1-XPX GROWN IN GAAS-ASCL3-PCL3-H2 SYSTEM
SEKI, H
TAKEUCHI, S
WAKASHIMA, Y
MANABE, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (07) : 1070 - +
[46] THE CADMIUM INCORPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM
彭瑞伍
徐晨梅
励翠云
王博弘
Journal of Electronics(China), 1986, (01) : 71 - 75
[47] Nonlinear increase in silicon epitaxial growth rate in a SiHCl3-H2 system under atmospheric pressure
Habuka, H
Katayama, M
Shimada, M
Okuyama, K
JOURNAL OF CRYSTAL GROWTH, 1997, 182 (3-4) : 352 - 362
[48] HOMOGENIZATION OF ALLOYS OF THE INAS-IN2SE3 SYSTEM BY ANNEALING UNDER PRESSURE
GORYUNOVA, NA
RADAUTSAN, SI
DERYABINA, VI
SOVIET PHYSICS-SOLID STATE, 1959, 1 (03): : 460 - 462
[49] FEATURES OF THE TEMPERATURE-DEPENDENCE OF EPITAXIAL-GROWTH RATE OF GAAS IN THE GA(CH3)3-ASH3-H2 SYSTEM
FROLOV, IA
LUKICHEV, AV
TOMCHINSKI, AM
AVERYANOV, VE
BARYSHEV, AV
INORGANIC MATERIALS, 1986, 22 (11) : 1558 - 1560
[50] KINETICS OF FORMATION OF ISOTHERMAL SUPERSATURATED VAPOR-PHASE IN THE SYSTEM GAAS-GAP-ASCL3-H2
ANTONOV, IV
GUBA, SK
ZHILYAEV, YV
ZELENIN, VV
KULIKOV, AY
INORGANIC MATERIALS, 1993, 29 (02) : 157 - 161

← 1 2 3 4 5 →