SIMPLE MODEL FOR ELECTRON-HOLE GENERATION AND SWITCHING MECHANISMS IN NTYPE-GAAS DIODES

被引：7

作者：

CHRISTENSSON, S

LUNDSTROM, I

MARKLUND, I

JEPPSSON, B

机构：

来源：

ELECTRONICS LETTERS | 1967年 / 3卷 / 11期

关键词：

D O I：

10.1049/el:19670400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：507 / +

页数：1

相关论文

共 14 条

[1] STABLE DOMAIN PROPAGATION IN GUNN EFFECT
BUTCHER, PN
FAWCETT, W
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11): : 1425 - &
[2] ELECTRON-HOLE GENERATION IN GAAS
CONWELL, EM
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (10) : 383 - +
[3] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES
COPELAND, JA
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +
[4] GIBSON AF, 1960, PROGRESS SEMICONDUCT, V4, P63
[5] AVALANCHE INJECTION IN SEMICONDUCTORS
GUNN, JB
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08): : 781 - 790
[6] SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES
HEEKS, JS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 68 - +
[7] VOLTAGE TUNING OF CONCENTRIC PLANAR GUNN DIODES
JEPPSSON, B
MARKLUND, I
OLSSON, K
[J]. ELECTRONICS LETTERS, 1967, 3 (11) : 498 - &
[8] FAILURE MECHANISMS IN GUNN DIODES
JEPPSSON, B
MARKLUND, I
[J]. ELECTRONICS LETTERS, 1967, 3 (05) : 213 - +
[9] INFRARED AND MICROWAVE RADIATIONS ASSOCIATED WITH A CURRENT-CONTROLLED INSTABILITY IN GAAS
LIU, SG
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (02) : 79 - +
[10] STEFLE MC, 1962, J PHYS SOC JPN, V17, P1729