THEORETICAL MODEL FOR CALCULATION OF BREAKDOWN VOLTAGE OF IMPLANTED PARA-NORMAL JUNCTIONS

被引：2

作者：

KERESZTES, P ^{[1
]}

MOHACSI, T ^{[1
]}

HEGEDUS, A ^{[1
]}

机构：

[1] INST CENT RES PHYS,BUDAPEST,HUNGARY

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 05期

关键词：

D O I：

10.1016/0038-1101(76)90080-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：415 / 418

页数：4

共 29 条

[1] BE-IMPLANTED PARA-NORMAL JUNCTIONS IN GA0.47IN0.53AS
VESCAN, L
SELDERS, J
KRAUTLE, H
KUTT, W
BENEKING, H
ELECTRONICS LETTERS, 1982, 18 (12) : 533 - 534
[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN GERMANIUM PARA-NORMAL JUNCTIONS
CHYNOWETH, AG
GUMMEL, HK
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 191 - &
[3] ON THE THEORY OF THE PHOTOMAGNETIC EFFECT IN PARA-NORMAL JUNCTIONS
RAVICH, YI
SOVIET PHYSICS-SOLID STATE, 1963, 4 (09): : 1767 - 1770
[4] MEASUREMENTS ON PARA-NORMAL JUNCTIONS IN LEAD SULPHIDE
MOSS, TS
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (10): : 697 - 700
[5] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS
GOBELI, GW
ALLEN, FG
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 23 - &
[6] THE EFFECTS OF PRESSURE AND TEMPERATURE ON THE RESISTANCE OF PARA-NORMAL JUNCTIONS IN GERMANIUM
HALL, HH
BARDEEN, J
PEARSON, GL
PHYSICAL REVIEW, 1951, 83 (04): : 879 - 879
[7] INJECTION LUMINESCENCE IN SI DOPED EPITAXIAL GAAS PARA-NORMAL JUNCTIONS
CONSTANTINESCU, C
CONSTANTINESCU, L
IVAN, E
REVUE ROUMAINE DE PHYSIQUE, 1981, 26 (8-9): : 1007 - 1012
[8] DETERMINATION OF THE BASIC PARAMETERS OF PHOTOVOLTAIC CELLS WITH PARA-NORMAL JUNCTIONS WITH RESPECT TO THEIR SPECTRAL CHARACTERISTICS
DUBROVSKII, GB
INDUSTRIAL LABORATORY, 1961, 27 (10): : 1236 - 1239
[9] METHOD FOR ESTIMATING THE PERCENTAGE DISTRIBUTION OF ALLOYING ADMIXTURES IN FUSED-IN PARA-NORMAL JUNCTIONS
RUBINSHTEIN, RN
FISTUL, VI
INDUSTRIAL LABORATORY, 1961, 27 (10): : 1245 - 1249
[10] THEORETICAL OPTIMIZATION OF METAL PARA-NORMAL SILICON SCHOTTKY-BARRIER SOLAR-CELL
XAVIER, CF
SEVARIRAJ, GA
KUMAR, V
PRAMANA, 1985, 25 (05) : 587 - 596

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