COMPARISON OF MEASURED AND CALCULATED DAMAGE DISTRIBUTIONS FOR LIGHT KEV ION-BOMBARDMENT OF SOLID-SURFACES

被引：15

作者：

THOMPSON, DA

ROBINSON, JE

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS | 1976年 / 132卷 / JAN-F期

关键词：

D O I：

10.1016/0029-554X(76)90743-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：261 / 265

页数：5

共 13 条

[1] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]
[2] EISEN FH, 1973, CHANNELING, P415
[3] LINDHARD J, 1963, KGL DAN VIDENSKAB SE, V33
[4] DISPLACEMENT THRESHOLDS IN SEMICONDUCTORS
LOFERSKI, JJ
RAPPAPORT, P
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1296 - 1299
[5] MITCHELL JB, 1974, 4TH P INT C ION IMPL
[6] SCATTERING AND RADIATION-DAMAGE FOR LIGHT KEV IONS ON SOLID-SURFACES
ROBINSON, JE
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (01): : 29 - 36
[7] Schmid K., 1973, RADIAT EFF, V17, P201, DOI [DOI 10.1080/00337577308232616, 10.1080/00337577308232616]
[8] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS
SIGMUND, P
[J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +
[9] ON NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS
SIGMUND, P
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (03) : 114 - &
[10] OPTICAL-ABSORPTION IN GE AND SI AFTER PROTON-BOMBARDMENT AT 10-K
STEIN, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3211 - 3212