INFRARED REFLECTANCE AND ABSORPTION OF N-TYPE INP

被引：36
作者：
KIM, OK
BONNER, WA
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 05期
关键词：
D O I：
10.1007/BF02655296
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：827 / 836
页数：10
相关论文
共 50 条
  • [31] INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS
    HOLM, RT
    GIBSON, JW
    PALIK, ED
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 212 - 223
  • [32] RADIATIVE RECOMBINATION IN N-TYPE INP
    LEITE, RCC
    PHYSICAL REVIEW, 1967, 157 (03): : 672 - &
  • [33] SPECTRAL SENSITIVITY OF N-TYPE INP
    KOVALEVS.GG
    NASLEDOV, DN
    SIUKAEV, NV
    SLOBODCH.SV
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (02): : 377 - &
  • [34] Photoacoustic studies on n-type InP
    George, NA
    Vallabhan, CPG
    Nampoori, VPN
    Radhakrishnan, P
    OPTICAL ENGINEERING, 2002, 41 (01) : 251 - 254
  • [35] OPTICAL PROPERTIES OF N-TYPE INP
    NEWMAN, R
    PHYSICAL REVIEW, 1958, 111 (06): : 1518 - 1521
  • [36] Time-resolved far-infrared reflectance of n-type GaAs
    van Dantzig, NA
    Planken, PCM
    PHYSICAL REVIEW B, 1999, 59 (03): : 1586 - 1589
  • [37] Comparison of currentline pore growth in n-type InP and in n-type Si
    Cojocaru, Ala
    Leisner, Malte
    Carstensen, Juergen
    Foell, Helmut
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6, 2011, 8 (06): : 1779 - 1782
  • [38] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE
    SPITZER, WG
    WHELAN, JM
    PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63
  • [39] HOT-CARRIER INFRARED-ABSORPTION IN N-TYPE GERMANIUM
    SEEGER, K
    VANA, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (02): : 605 - 610
  • [40] LOW-TEMPERATURE INFRARED-ABSORPTION OF N-TYPE GAP
    GOLDYS, E
    GALTIER, P
    MARTINEZ, G
    GORCZYCA, I
    PHYSICAL REVIEW B, 1987, 36 (18): : 9662 - 9670
12345