DIFFUSION OF TELLURIUM DOPANT IN SILICON

被引：23
作者：
JANZEN, E
GRIMMEISS, HG
LODDING, A
DELINE, C
机构：
[1] CHALMERS UNIV TECHNOL,CTR MAT SCI,S-41296 GOTHENBURG,SWEDEN
[2] CH EVANS & ASSOCIATES,SAN MATEO,CA 94402
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 11期
关键词：
D O I：
10.1063/1.330104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：7367 / 7371
页数：5
相关论文
共 38 条
[1]  
ANTHONY TR, 1970, VACANCIES INTERSTITI
[2]   THE ELECTRICAL-PROPERTIES OF SULFUR IN SILICON [J].
BROTHERTON, SD ;
KING, MJ ;
PARKER, GJ .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4649-4658
[3]  
CARLSON RO, 1957, J PHYS CHEM SOLIDS, V8, P81
[4]  
COURBEVOIE C, 1980, IMS3F TECHN DESCR
[5]  
DORNER P, 1982, Z METALLKD, V73, P325
[6]   SIMS INVESTIGATIONS ON THE DIFFUSION OF CU IN AG SINGLE-CRYSTALS [J].
DORNER, P ;
GUST, W ;
HINTZ, MB ;
LODDING, A ;
ODELIUS, H ;
PREDEL, B .
ACTA METALLURGICA, 1980, 28 (03) :291-300
[7]  
DORNER P, PHILOS MAG
[8]  
DORNER P, 1980, THESIS STUTTGART
[9]   SELF-INTERSTITIALS AND VACANCIES IN ELEMENTAL SEMICONDUCTORS BETWEEN ABSOLUTE-ZERO AND THE TEMPERATURE OF MELTING [J].
FRANK, W .
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1981, 21 :221-242
[10]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
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