ELECTRONIC-STRUCTURE OF NISI2

被引：27

作者：

CHANG, YJ

ERSKINE, JL

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.7031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7031 / 7034

页数：4

共 18 条

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[3]

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[5] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].

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[6] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J].

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[7]

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[8]

EBERHARDT W, 1980, PHYS REV B, V21, P5572, DOI 10.1103/PhysRevB.21.5572

[9] ANGLE-RESOLVED PHOTOEMISSION DETERMINATION OF THE BAND-STRUCTURE AND MULTIELECTRON EXCITATIONS IN NI [J].

EBERHARDT, W ;

PLUMMER, EW .

PHYSICAL REVIEW B, 1980, 21 (08) :3245-3255

[10] SURFACE-STATES AND THE PHOTOELECTRON-SPIN POLARIZATION OF NI(100) [J].

ERSKINE, JL .

PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1446-1449

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