COMPARISON OF SOFT ERRORS INDUCED BY HEAVY-IONS AND PROTONS

被引：29

作者：

BISGROVE, JM

LYNCH, JE

MCNULTY, PJ

ABDELKADER, WG

KLETNIEKS, V

KOLASINSKI, WA

机构：

[1] CLARKSON UNIV,CTR EDUC RESOURCE,POTSDAM,NY 13676

[2] AEROSPACE CORP,SPACE SCI LAB,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1571 / 1576

页数：6

共 9 条

[1]

BISGROVE JM, UNPUB

[2] CHARGE-DEPOSITION SPECTRA IN THIN SLABS OF SILICON INDUCED BY ENERGETIC PROTONS [J].

ELTELEATY, S ;

FARRELL, GE ;

MCNULTY, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4394-4397

[3] MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE [J].

FARRELL, GE ;

MCNULTY, PJ ;

ABDELKADER, W .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1073-1077

[4] MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON [J].

FARRELL, GE ;

MCNULTY, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2012-2016

[5] METHODS FOR CALCULATING SEU RATES FOR BIPOLAR AND NMOS CIRCUITS [J].

MCNULTY, PJ ;

ABDELKADER, WG ;

BISGROVE, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4180-4184

[6] PROTON-INDUCED NUCLEAR-REACTIONS IN SILICON [J].

MCNULTY, PJ ;

FARRELL, GE ;

TUCKER, WP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4007-4012

[7] SUGGESTED SINGLE EVENT UPSET FIGURE OF MERIT [J].

PETERSEN, EL ;

LANGWORTHY, JB ;

DIEHL, SE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4533-4539

[8] COSMIC-RAY INDUCED ERRORS IN MOS MEMORY CELLS [J].

PICKEL, JC ;

BLANDFORD, JT .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1166-1171

[9]

WHITTELES AA, 1982, IEEE T NUC SCI, V32, P1665

← 1 →