OPTIMIZATION OF SN DOPING IN GAALAS/GAAS DH LASERS GROWN BY MBE

被引：4
|
作者：
STAGG, JP [1 ]
HULYER, PJ [1 ]
FOXON, CT [1 ]
ASHENFORD, D [1 ]
机构：
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,LONDON SW7 2BZ,ENGLAND
来源：
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期
关键词：
D O I：
10.1051/jphyscol:1982542
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学科分类号：
摘要：
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页码：377 / 382
页数：6
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