CARBON-TETRACHLORIDE PLASMA-ETCHING OF GAAS AND INP - A KINETIC-STUDY UTILIZING NONPERTURBATIVE OPTICAL TECHNIQUES

被引：64
作者：
GOTTSCHO, RA
SMOLINSKY, G
BURTON, RH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期
关键词：
D O I：
10.1063/1.331433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5908 / 5919
页数：12
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