CARBON-TETRACHLORIDE PLASMA-ETCHING OF GAAS AND INP - A KINETIC-STUDY UTILIZING NONPERTURBATIVE OPTICAL TECHNIQUES

被引：64

|

作者：

GOTTSCHO, RA

SMOLINSKY, G

BURTON, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.331433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5908 / 5919

页数：12

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[1] CARBON TETRACHLORIDE PLASMA ETCHING OF GaAs AND InP: A KINETIC STUDY UTILIZING NONPERTURBATIVE OPTICAL TECHNIQUES.
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1600, (53):
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