DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS)

被引：106

作者：

KOWALCZYK, SP

SCHAFFER, WJ

KRAUT, EA

GRANT, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：705 / 708

页数：4

相关论文

共 26 条

[1] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
BARAFF, GA
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240
[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[3] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225
[4] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
KRAUT, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 477 - 480
[5] ELEMENTARY THEORY OF HETEROJUNCTIONS
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[6] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER
KOWALCZYK, SP
MILLER, DL
WALDROP, JR
NEWMAN, PG
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 255 - 256
[7] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS
KRAUT, EA
GRANT, RW
WALDROP, JR
KOWALCZYK, SP
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1620 - 1623
[8] KRAUT EA, UNPUB
[9] ELECTRONIC PROPERTIES OF (100) SURFACES OF GASB AND INAS AND THEIR ALLOYS WITH GAAS
LUDEKE, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) : 304 - 314
[10] LUSCHER PE, 1980, ELECTRONICS, V53, P160