MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN SEMICONDUCTORS USING A COMPUTERIZED FACILITY

被引：0
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作者：
GERMANOVA, K
NIKOLOV, L
KHARDALOV, C
TSVETKOV, T
机构：
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1994年 / 37卷 / 02期
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T [工业技术];
学科分类号：
08 ;
摘要：
Measurements of the minority-carrier diffusion length L(d) in semiconductor using a modular computerized facility are reported. The surface photoelectric voltage was measured in the dc mode. The method guarantees high sensitivity, stability, and reliability of measurements. The diffusion length in p-Si/SiO2 samples is L(d) = 29 +/- 2 mum.
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页码：224 / 227
页数：4
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