STUDIES ON THE SELECTIVE OMVPE OF (GA,IN)/(AS,P)

Selective epitaxy was studied at 76 Torr, with a very large masked area, for the binaries GaAs, InAs, GaP, and InP, and for GaInAs and GaInP respectively lattice-matched to InP and GaAs. For the binaries, the growth rate enhancements in the open area are: R(InAs) > R(InP) > R(GaAs) > R(GaP). This can be related to the extent of decomposition of TMIn or TMGa in the presence of AsH3 or PH3. In the selective epitaxy of GaInAs and GaInP, the binary fractions do not show the same growth rate enhancements as the binaries themselves. Good agreement with experimental results was obtained for GaInAs by using the GaAs and InP curves, but this led to a large overestimate of the In mole fraction of selectively grown GaInP.