LASER DIRECT WRITING OF SINGLE-CRYSTAL III-V COMPOUNDS ON GAAS

被引：23

作者：

KARAM, NH ^{[1
]}

ELMASRY, NA ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：880 / 882

页数：3

共 14 条

[1]

ALLEN SD, 1981, APPL PHYS, V52, P6502

[2] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J].

AOYAGI, Y ;

MASUDA, S ;

NAMBA, S ;

DOI, A .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :95-96

[3]

BAUERK D, 1982, APPL PHYS LETT, V40, P9

[4] LASER SELECTIVE DEPOSITION OF GAAS ON SI [J].

BEDAIR, SM ;

WHISNANT, JK ;

KARAM, NH ;

TISCHLER, MA ;

KATSUYAMA, T .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :174-176

[5]

BEDAIR SM, J CRYST GROWTH

[6] FORMATION OF (100) GAAS ON (100) SILICON BY LASER RECRYSTALLIZATION [J].

CHRISTOU, A ;

EFTHIMIOPOULOS, T ;

KIRIAKIDIS, G ;

VARMAZIS, C .

APPLIED PHYSICS LETTERS, 1986, 48 (22) :1516-1518

[7]

DONNELLY VM, 1984, APPL PHYS LETT, V44, P10

[8] PHOTODEPOSITION OF METAL-FILMS WITH ULTRAVIOLET-LASER LIGHT [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :23-32

[9] SPATIALLY DELINEATED GROWTH OF METAL-FILMS VIA PHOTOCHEMICAL PRE-NUCLEATION [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :946-948

[10]

EHRLICH DJ, 1981, THIN SOLID FILMS, V90, P287

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