ON THE TEMPERATURE-DEPENDENCE OF THE 1/F NOISE HOOGE PARAMETER ALPHA-H IN N-CHANNEL SILICON JFETS

被引：1
作者：
PODOR, B [1 ]
机构：
[1] HUNGARIAN ACAD SCI,INORGAN CHEM RES LAB,NAT SCI RES LABS,H-1325 BUDAPEST,HUNGARY
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期
关键词：
D O I：
10.1109/EDL.1986.26491
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：610 / 611
页数：2
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