ON THE TEMPERATURE-DEPENDENCE OF THE 1/F NOISE HOOGE PARAMETER ALPHA-H IN N-CHANNEL SILICON JFETS

被引：1

作者：

PODOR, B ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,INORGAN CHEM RES LAB,NAT SCI RES LABS,H-1325 BUDAPEST,HUNGARY

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：610 / 611

页数：2

共 50 条

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