A NEW TECHNIQUE FOR CHARACTERIZING LOW-DEFECT SIMOX

被引：3
|
作者：
FECHNER, PS
GARDNER, GR
LIU, ST
机构：
[1] Honeywell Solid State Electronics Center, Plymouth, MN 55441
来源：
MATERIALS LETTERS | 1990年 / 9卷 / 12期
关键词：
D O I：
10.1016/0167-577X(90)90097-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Defect density in thin top silicon layer of SIMOX materials was investigated. TEM characterization of low-defect (< 106 cm-2) SIMOX was both cost and time prohibitive to inspect large areas. A new technique using a diluted Secco etch followed by a hydrofluoric acid decoration was developed to identify unambiguously such defects. The technique utilizes the same etchant and equipment used for defect characterization of single-crystalline silicon wafers and is found useful in SOI device development. © 1990.
引用
收藏
页码：508 / 510
页数：3
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