TRANSIENT NONLINEAR LASER-HEATING AND DEPOSITION - A COMPARISON OF THEORY AND EXPERIMENT

[1] LASER CHEMICAL VAPOR-DEPOSITION OF SELECTED AREA FE AND W FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1641 - 1643

[2] REAL-TIME MEASUREMENT OF DEPOSITION INITIATION AND RATE IN LASER CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 327 - 331

[3] ALLEN SD, 1984, P SOC PHOTO-OPT INST, V459, P42, DOI 10.1117/12.939433

[4] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[5] MODELING OF CW LASER ANNEALING OF MULTILAYER STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7545 - 7550

[6] CARLTON HE, 1967, AM I CHEM ENG J, V12, P86

[7] TRANSIENT TEMPERATURE PROFILES IN SOLIDS HEATED WITH SCANNING LASER [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 1062 - 1066

[8] COPLEY SM, COMMUNICATION

[9] EDWARDS RH, CALCULATIONS PROGR

[10] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P981

[1] LASER CHEMICAL VAPOR-DEPOSITION OF SELECTED AREA FE AND W FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1641 - 1643

[2] REAL-TIME MEASUREMENT OF DEPOSITION INITIATION AND RATE IN LASER CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 327 - 331

[3] ALLEN SD, 1984, P SOC PHOTO-OPT INST, V459, P42, DOI 10.1117/12.939433

[4] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[5] MODELING OF CW LASER ANNEALING OF MULTILAYER STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7545 - 7550

[6] CARLTON HE, 1967, AM I CHEM ENG J, V12, P86

[7] TRANSIENT TEMPERATURE PROFILES IN SOLIDS HEATED WITH SCANNING LASER [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 1062 - 1066

[8] COPLEY SM, COMMUNICATION

[9] EDWARDS RH, CALCULATIONS PROGR

[10] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P981